STP80PF55

Obsolete

STMicroelectronics

MOSFET P-CH 55V 80A TO220AB

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET P-CH 55V 80A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP80PF55

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	258 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology
STMicroelectronics STP80PF55	18 mOhm	55 V	TO-220	P-Channel	16 V	300 W	5500 pF	Through Hole	258 nC	-55 °C	175 ░C	4 V	10 V	TO-220-3	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 55 V 80A (Tc) 300W (Tc) Through Hole TO-220

Technical documentation and resources