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IDW20G120C5BFKSA1 - INFINEON IDYH80G200C5XKSA1

IDW20G120C5BFKSA1

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Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, DUAL COMMON CATHODE, 1.2 KV, 62 A, 106 NC

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IDW20G120C5BFKSA1 - INFINEON IDYH80G200C5XKSA1

IDW20G120C5BFKSA1

Active
Infineon Technologies

SILICON CARBIDE SCHOTTKY DIODE, COOLSIC 5G SERIES, DUAL COMMON CATHODE, 1.2 KV, 62 A, 106 NC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIDW20G120C5BFKSA1
Current - Average Rectified (Io) (per Diode)31 A
Current - Reverse Leakage @ Vr83 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-247-3
Speed200 mA, 500 ns
Supplier Device PackagePG-TO247-3
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 5.39
10$ 5.33
25$ 4.63
100$ 4.40
DigikeyTube 1$ 9.81
30$ 5.87
120$ 5.58
NewarkEach 1$ 11.25
10$ 10.60
25$ 8.31
50$ 7.96
100$ 7.61
480$ 7.60
720$ 7.25

Description

General part information

IDW20G120 Series

CoolSiC™ Schottky diodegeneration 5 1200 V, 20 A in a TO-247-3 package presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is combined with a merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Documents

Technical documentation and resources