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STB9NK50ZT4 - ROHM RBR10NS40AFHTL

STB9NK50ZT4

NRND
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 7.2 A, 500 V, 0.72 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENAN4250+19
STB9NK50ZT4 - ROHM RBR10NS40AFHTL

STB9NK50ZT4

NRND
STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 7.2 A, 500 V, 0.72 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice ENAN4250+19

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB9NK50ZT4
Current - Continuous Drain (Id) @ 25°C7.2 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs32 nC
Input Capacitance (Ciss) (Max) @ Vds910 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs850 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.52
10$ 1.26
100$ 1.01
500$ 0.85
Digi-Reel® 1$ 1.52
10$ 1.26
100$ 1.01
500$ 0.85
Tape & Reel (TR) 1000$ 0.72
2000$ 0.69
5000$ 0.66
10000$ 0.64
NewarkEach 1$ 2.57
10$ 1.74
100$ 1.27
500$ 1.06

Description

General part information

STB9NK50Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.