IXFP14N60P3

Obsolete

IXYS

MOSFET N-CH 600V 14A TO220AB

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 600V 14A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP14N60P3

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1480 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	327 W
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFP14N60P3	Through Hole	TO-220-3	540 mOhm	1480 pF	14 A	-55 °C	150 °C	30 V	TO-220-3	N-Channel	10 V	327 W	600 V	MOSFET (Metal Oxide)	25 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 14A (Tc) 327W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available