IDH02G120C5XKSA1
ActiveCOOLSIC™ SCHOTTKY DIODE GENERATION 5 1200 V, 2 A IN A TO-220 REAL2PIN PACKAGE - PERFECT FOR YOUR DRIVES, WELDING, UPS, CAV, POWER SUPPLIES, FAST-EV-CHARGING, AUX POWER, STORAGE AND SOLAR SYSTEMS.
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IDH02G120C5XKSA1
ActiveCOOLSIC™ SCHOTTKY DIODE GENERATION 5 1200 V, 2 A IN A TO-220 REAL2PIN PACKAGE - PERFECT FOR YOUR DRIVES, WELDING, UPS, CAV, POWER SUPPLIES, FAST-EV-CHARGING, AUX POWER, STORAGE AND SOLAR SYSTEMS.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IDH02G120C5XKSA1 |
|---|---|
| Capacitance @ Vr, F | 182 pF |
| Current - Average Rectified (Io) | 2 A |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-TO220-2-1 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V |
Pricing
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Description
General part information
IDH02G120 Series
TheCoolSiC™ Schottky diodegeneration 5 1200 V, 2 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Documents
Technical documentation and resources