IRL8114PBF

Obsolete

Infineon Technologies

MOSFET N-CH 30V 90A TO220AB

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 90A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRL8114PBF

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	2660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	115 W
Rds On (Max) @ Id, Vgs [Max]	4.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.25 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IRL8114PBF	Through Hole	-55 °C	175 ░C	2660 pF	TO-220-3	N-Channel	29 nC	90 A	2.25 V	30 V	20 V	4.5 mOhm	TO-220AB	115 W	MOSFET (Metal Oxide)
Infineon Technologies IRL8114PBF	Through Hole	-55 °C	175 ░C	2660 pF	TO-220-3	N-Channel	29 nC	90 A	2.25 V	30 V	20 V	4.5 mOhm	TO-220AB	115 W	MOSFET (Metal Oxide)	4.5 V 10 V

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General part information

N-Channel 30 V 90A (Tc) 115W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available