Technical Specifications
Parameters and characteristics for this part
| Specification | STU5N62K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.2 A |
| Drain to Source Voltage (Vdss) | 620 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 26 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 70 W |
| Rds On (Max) @ Id, Vgs | 1.6 Ohm |
| Supplier Device Package | TO-251 (IPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.77 | |
| 75 | $ 1.42 | |||
| 150 | $ 1.17 | |||
| 525 | $ 0.99 | |||
| 1050 | $ 0.84 | |||
| 2025 | $ 0.80 | |||
| 5025 | $ 0.77 | |||
| 10050 | $ 0.74 | |||
Description
General part information
STU5N62 Series
These devices are made using the SuperMESH3 Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.100% avalanche testedExtremely large avalanche performanceGate charge minimizedVery low intrinsic capacitanceImproved diode reverse recovery characteristicsZener-protected
Documents
Technical documentation and resources