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DMTH32M5LPS-13 - DMPH4015SPSQ-13

DMTH32M5LPS-13

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Diodes Inc

30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH32M5LPS-13 - DMPH4015SPSQ-13

DMTH32M5LPS-13

Active
Diodes Inc

30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH32M5LPS-13
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]68 nC
Input Capacitance (Ciss) (Max) @ Vds3944 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)3.2 W, 100 W
Rds On (Max) @ Id, Vgs2.2 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.39
5000$ 0.36
7500$ 0.35

Description

General part information

DMTH32M5LPSQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.