
DMTH32M5LPS-13
ActiveDiodes Inc
30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Search across all available documentation for this part.

DMTH32M5LPS-13
ActiveDiodes Inc
30V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH32M5LPS-13 |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 68 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3944 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3.2 W, 100 W |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm |
| Supplier Device Package | PowerDI5060-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.39 | |
| 5000 | $ 0.36 | |||
| 7500 | $ 0.35 | |||
Description
General part information
DMTH32M5LPSQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.
Documents
Technical documentation and resources