LSC06065Q8

Obsolete

Diodes Inc

DIODE SIL CARB 650V 6A DFN8080

Search across all available documentation for this part.

Obsolete

Diodes Inc

DIODE SIL CARB 650V 6A DFN8080

Technical Specifications

Parameters and characteristics for this part

Specification	LSC06065Q8

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	4-PowerTSFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	DFN8080
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

SiC Diode

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Supplier Device Package	Technology	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
Diodes Inc LSC06065Q8	175 ░C	-55 C	4-PowerTSFN	DFN8080	SiC (Silicon Carbide) Schottky	No Recovery Time	1.7 V	6 A	200 µA	0 ns	650 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$