HS3MB

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Taiwan Semiconductor Corporation

75NS, 3A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

75NS, 3A, 1000V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HS3MB

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Technology	Package / Case	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation HS3MB	150 °C	-55 °C	1.7 V	200 mA 500 ns	10 çA	SMB	DO-214AA	1000 V	Surface Mount	Standard	DO-214AA SMB	75 ns	50 pF	3 A
Taiwan Semiconductor Corporation HS3M M6G	150 °C	-55 °C	1.7 V	200 mA 500 ns	10 çA		DO-214AB (SMC)	1000 V	Surface Mount	Standard	DO-214AB SMC	75 ns	50 pF	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources