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STB85NF55T4 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB85NF55T4

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STMicroelectronics

TRANS MOSFET N-CH 55V 80A 3-PIN(2+TAB) D2PAK T/R

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STB85NF55T4 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STB85NF55T4

Active
STMicroelectronics

TRANS MOSFET N-CH 55V 80A 3-PIN(2+TAB) D2PAK T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB85NF55T4
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]300 W
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.81
10$ 2.36
100$ 1.91
500$ 1.70
Digi-Reel® 1$ 2.81
10$ 2.36
100$ 1.91
500$ 1.70
Tape & Reel (TR) 1000$ 1.45
2000$ 1.37
5000$ 1.31

Description

General part information

STB85 Series

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.Designed for automotive applications and AEC-Q101 qualifiedExceptional dv/dt capability100% avalanche tested

Documents

Technical documentation and resources

No documents available