STH140N6F7-2

Obsolete

STMicroelectronics

MOSFET N-CH 60V 80A H2PAK-2

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 60V 80A H2PAK-2

Technical Specifications

Parameters and characteristics for this part

Specification	STH140N6F7-2

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	158 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id
STMicroelectronics STH140N6F7-2	175 °C	H2Pak-2	40 nC	158 W	MOSFET (Metal Oxide)	60 V	3 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	20 V	Surface Mount	N-Channel	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 80A (Tc) 158W (Tc) Surface Mount H2PAK-2

Technical documentation and resources