HS2D

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Taiwan Semiconductor Corporation

50NS, 2A, 200V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

50NS, 2A, 200V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HS2D

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Supplier Device Package	Supplier Device Package	Capacitance @ Vr, F	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed
Taiwan Semiconductor Corporation HS2D R5G	1 V	Standard	5 µA	50 ns	150 °C	-55 °C	2 A	SMB	DO-214AA	50 pF	Surface Mount	200 V	DO-214AA SMB	200 mA 500 ns
Taiwan Semiconductor Corporation HS2D	1 V	Standard	5 µA	50 ns	150 °C	-55 °C	2 A	SMB	DO-214AA	50 pF	Surface Mount	200 V	DO-214AA SMB	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 2A Surface Mount DO-214AA (SMB)

Technical documentation and resources