IPP60R022S7XKSA1

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Infineon Technologies

INFINEON’S 600V COOLMOS™ S7 SUPERJUNCTION POWER MOSFET IPP60R022S7 FOR LOW SWITCHING FREQUENCY APPLICATIONS

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IPP60R022S7XKSA1

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Infineon Technologies

INFINEON’S 600V COOLMOS™ S7 SUPERJUNCTION POWER MOSFET IPP60R022S7 FOR LOW SWITCHING FREQUENCY APPLICATIONS

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R022S7XKSA1

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	12 V, 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	150 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5639 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	390 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPP60R022 Series

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)
Infineon Technologies IPP60R022S7XKSA1	23 A	22 mOhm	PG-TO220-3-1	20 V	150 nC	TO-220-3	390 W	-55 °C	150 °C	MOSFET (Metal Oxide)	12 V 12 V	N-Channel	4.5 V	Through Hole	5639 pF	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 11.28
		10	$ 7.83
		100	$ 5.87
		500	$ 5.56
Newark	Each	1	$ 10.34
		10	$ 9.11
		25	$ 5.96
		50	$ 5.78
		100	$ 5.60
		250	$ 5.58
		500	$ 5.26

Description

General part information

IPP60R022 Series

With a design optimized for low conduction losses, the 600V CoolMOS™ S7 Superjunction MOSFET (IPP60R022S7) in TO-220 features the best RDS(on)x price for low switching frequency applications, such as active bridge rectifiers, inverter stages, in-rush relays,PLCs, HV DC lines, powersolid state relaysand solid state circuit breakers. The 600V CoolMOS™ S7 SJ MOSFET achieves higher energy efficiency and reduces BOM expenses.