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IPN80R4K5P7ATMA1 - Infineon Technologies AG-IPN70R600P7SATMA1 MOSFETs Trans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) SOT-223 T/R

IPN80R4K5P7ATMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; SOT-223 PACKAGE; 4500 MOHM; PRICE/PERFORMANCE

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IPN80R4K5P7ATMA1 - Infineon Technologies AG-IPN70R600P7SATMA1 MOSFETs Trans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) SOT-223 T/R

IPN80R4K5P7ATMA1

Active
Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; SOT-223 PACKAGE; 4500 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPN80R4K5P7ATMA1
Current - Continuous Drain (Id) @ 25°C1.5 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]80 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max) [Max]6 W
Rds On (Max) @ Id, Vgs4.5 Ohm
Supplier Device PackagePG-SOT223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 5$ 0.80
50$ 0.55
100$ 0.36
200$ 0.36
500$ 0.30
DigikeyCut Tape (CT) 1$ 1.04
10$ 0.65
100$ 0.43
500$ 0.33
1000$ 0.30
Digi-Reel® 1$ 1.04
10$ 0.65
100$ 0.43
500$ 0.33
1000$ 0.30
Tape & Reel (TR) 3000$ 0.26
6000$ 0.24
9000$ 0.23
15000$ 0.22
NewarkEach (Supplied on Cut Tape) 1$ 0.95
10$ 0.70
25$ 0.63
50$ 0.56
100$ 0.50

Description

General part information

IPN80R4 Series

800V CoolMOS™ P7superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on)products. Overall, it helps customers save BOM cost and reduce assembly effort.

Documents

Technical documentation and resources