STF2LN60K3

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STMicroelectronics

MOSFET N CH 600V 2A TO-220FP

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STMicroelectronics

MOSFET N CH 600V 2A TO-220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STF2LN60K3

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	235 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	4.5 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type
STMicroelectronics STF2LN60K3	150 °C	30 V	12 nC	20 W	TO-220FP	600 V	235 pF	10 V	Through Hole	TO-220-3 Full Pack	MOSFET (Metal Oxide)	4.5 V	2 A	4.5 Ohm	N-Channel

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General part information

N-Channel 600 V 2A (Tc) 20W (Tc) Through Hole TO-220FP

Technical documentation and resources