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STW13N80K5 - TO-247-3 HiP

STW13N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.37 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetAN4250+17
STW13N80K5 - TO-247-3 HiP

STW13N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.37 OHM TYP., 12 A MDMESH K5 POWER MOSFET IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheetAN4250+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW13N80K5
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Input Capacitance (Ciss) (Max) @ Vds870 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]190 W
Rds On (Max) @ Id, Vgs450 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 30$ 3.43
90$ 2.94
300$ 2.78
750$ 2.62
1500$ 2.24
3000$ 2.11
LCSCPiece 1$ 5.67
10$ 4.89
30$ 4.42
100$ 3.95
500$ 3.73
1000$ 3.63
NewarkEach 1$ 5.71
10$ 4.83
25$ 3.94
50$ 3.78
100$ 3.62
250$ 3.29

Description

General part information

STW13NK60Z Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.