IPB65R045C7ATMA2

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Infineon Technologies

POWER MOSFET, N CHANNEL, 650 V, 46 A, 0.04 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 650 V, 46 A, 0.04 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IPB65R045C7ATMA2

Current - Continuous Drain (Id) @ 25°C	46 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	4340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	227 W
Rds On (Max) @ Id, Vgs	45 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Infineon Technologies IPB65R045C7ATMA2	Surface Mount	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	46 A	20 V	10 V	93 nC	4 V	4340 pF	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	227 W	45 mOhm

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General part information

N-Channel 650 V 46A (Tc) 227W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources