SPD08P06P

Obsolete

Infineon Technologies

MOSFET P-CH 60V 8.83A TO252-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET P-CH 60V 8.83A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPD08P06P

Current - Continuous Drain (Id) @ 25°C	8.83 A
Drain to Source Voltage (Vdss)	60 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	420 pF
Mounting Type	Surface Mount
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies SPD08P06P	420 pF	Surface Mount	300 mOhm	8.83 A	PG-TO252-3	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	4 V	42 W	P-Channel	MOSFET (Metal Oxide)	13 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 8.83A (Ta) 42W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources

No documents available