IRF6717MTRPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.25 MOHM;

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IRF6717MTRPBF

Active

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.25 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6717MTRPBF

Current - Continuous Drain (Id) @ 25°C	200 A, 38 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max]	69 nC
Input Capacitance (Ciss) (Max) @ Vds	6750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Rds On (Max) @ Id, Vgs	1.25 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

IRF6717 Series

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Technology	Vgs(th) (Max) @ Id
Infineon Technologies IRF6717MTRPBF	DIRECTFET™ MX	4.5 V 10 V	1.25 mOhm	25 V	6750 pF	Surface Mount	4.5 V	69 nC	N-Channel	DirectFET™ Isometric MX	38 A 200 A	150 °C	-40 °C	20 V	MOSFET (Metal Oxide)	2.35 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.63
		10	$ 2.38
		100	$ 1.66
		500	$ 1.36
		1000	$ 1.26
		2000	$ 1.23
	Digi-Reel®	1	$ 3.63
		10	$ 2.38
		100	$ 1.66
		500	$ 1.36
		1000	$ 1.26
		2000	$ 1.23
	Tape & Reel (TR)	4800	$ 1.23
Newark	Each (Supplied on Full Reel)	4800	$ 1.28

Description

General part information

IRF6717 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources