STD7N65M6

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STMicroelectronics

TRANS MOSFET N-CH 650V 5A 3-PIN(2+TAB) DPAK T/R

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STD7N65M6

Active

STMicroelectronics

TRANS MOSFET N-CH 650V 5A 3-PIN(2+TAB) DPAK T/R

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD7N65M6

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.9 nC
Input Capacitance (Ciss) (Max) @ Vds	220 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	990 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3.75 V

STD7N65M2 Series

N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STD7N65M2	270 pF	-55 °C	150 °C	60 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	10 V	650 V	DPAK	5 A	Surface Mount	9 nC	4 V	25 V	1.15 Ohm	N-Channel
STMicroelectronics STD7N65M6	220 pF	-55 °C	150 °C	60 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	10 V	650 V	TO-252 (DPAK)	5 A	Surface Mount		3.75 V	25 V	990 mOhm	N-Channel	6.9 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.53
	Digi-Reel®	1	$ 1.53
	Tape & Reel (TR)	2500	$ 0.69
		5000	$ 0.66
		12500	$ 0.64

Description

General part information

STD7N65M2 Series

This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources

No documents available