STI30N65M5

Obsolete

STMicroelectronics

MOSFET N-CH 650V 22A I2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 22A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STI30N65M5

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	2880 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	139 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STI30N65M5	MOSFET (Metal Oxide)	25 V	2880 pF	N-Channel	10 V	I2PAK	64 nC	5 V	150 °C	140 W	650 V	139 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	22 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 22A (Tc) 140W (Tc) Through Hole I2PAK

Technical documentation and resources