1N2133A

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GeneSiC Semiconductor

DIODE GEN PURP 300V 60A DO5

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GeneSiC Semiconductor

DIODE GEN PURP 300V 60A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N2133A

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP 300V 60A DO5

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)
GeneSiC Semiconductor 1N2133A	300 V	DO-203AB, DO-5, Stud	DO-5	10 µA	Standard	Chassis, Stud Mount	Standard Recovery >500ns	200 mA	1.1 V	200 C	-65 C	60 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	800	$ 7.42

General part information

Diode 300 V 60A Chassis, Stud Mount DO-5

Technical documentation and resources