S70JR

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 70A DO5

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 70A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S70JR

Current - Average Rectified (Io)	70 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	180 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP REV 600V 70A DO5

Part	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Technology	Package / Case	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor S70JR	70 A	-65 C	180 °C	DO-5	Reverse Polarity, Standard	DO-203AB, DO-5, Stud	Standard Recovery >500ns	200 mA	1.1 V	Chassis, Stud Mount	600 V	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	600	$ 8.25

General part information

Diode 600 V 70A Chassis, Stud Mount DO-5

Technical documentation and resources