EMH10T2R

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Rohm Semiconductor

NPN+NPN, SOT-563, DUAL DIGITAL TRANSISTOR (BIAS RESISTOR BUILT-IN TRANSISTOR)

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EMH10T2R

Active

Rohm Semiconductor

NPN+NPN, SOT-563, DUAL DIGITAL TRANSISTOR (BIAS RESISTOR BUILT-IN TRANSISTOR)

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Description Specifications Series Pricing CAD Documents

Description

General part information

EMH10 Series

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Technical Specifications

Parameters and characteristics for this part

Specification	EMH10T2R

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	56
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
NPN Count	2
Package / Case	SOT-563, SOT-666
Package Name	EMT6
Power - Max	150 mW
Resistor - Base (R1) Resistance	22 kOhm
Resistor - Emitter Base (R2)	22 kOhms
Transistor Configuration	Dual, Pre-Biased
Transistor Type	NPN
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

EMH10 Series

Part	Mounting Type	DC Current Gain (hFE) (Min)	Resistor - Base (R1) Resistance	Package Name	NPN Count	Transistor Type	Transistor Configuration	Frequency - Transition	Power - Max	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Package / Case	Vce Saturation (Max)	Voltage - Collector Emitter Breakdown (Max)	Grade	Qualification
Rohm Semiconductor EMH10T2R	Surface Mount	56	22 kOhm	EMT6	2	NPN	Dual Pre-Biased	250 MHz	150 mW	22 kOhms	0.1 mA	500 nA	SOT-563 SOT-666	300 mV	50 V
Rohm Semiconductor EMH10FHAT2R	Surface Mount	80	2.2 kOhm	EMT6	2	NPN	Dual Pre-Biased	250 MHz	150 mW	47 kOhm	0.1 mA		SOT-563 SOT-666	300 mV		Automotive	AEC-Q101