Technical Specifications
Parameters and characteristics for this part
| Specification | STPST10H100SBYTR |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 26 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Qualification | AEC-Q101 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPST10H100SB-Y Series
This 10 A, 100 V rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface.
Integrated in a DPAK package, this STPST10H100SB-Y trench, and automotive-graded device is intended to be used in high frequency miniature switched mode power supplies such as in automotive, DC/DC converters or ECU power supply. It is also adapted to freewheeling applications, OR-ring, or reverse polarity protection.
Documents
Technical documentation and resources