Specification	SQ2310ES-T1_GE3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	8.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	485 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SQ2310 Series

Part	Grade	Package / Case	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Max)	Qualification	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Technology	Rds On (Max)
Vishay Dale SQ2310ES-T1_GE3	Automotive	SC-59 SOT-23-3 TO-236-3	1 V	20 V	Surface Mount	8.5 nC	AEC-Q101	SOT-23-3 (TO-236)	4.5 V	1.5 V	6 A	8 V	N-Channel	485 pF	-55 °C	175 °C	2 W	MOSFET (Metal Oxide)	30 mOhm
Vishay Dale SQ2310ES-T1_BE3	Automotive	SC-59 SOT-23-3 TO-236-3	1 V	20 V	Surface Mount	8.5 nC	AEC-Q101	SOT-23-3 (TO-236)	4.5 V	1.5 V	6 A	8 V	N-Channel	485 pF	-55 °C	175 °C	2 W	MOSFET (Metal Oxide)	30 mOhm

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