RGTV80TK65GVC11
NRNDRohm Semiconductor
2ΜS SHORT-CIRCUIT TOLERANCE, 650V 23A, TO-3PFM, FIELD STOP TRENCH IGBT
RGTV80TK65GVC11
NRNDRohm Semiconductor
2ΜS SHORT-CIRCUIT TOLERANCE, 650V 23A, TO-3PFM, FIELD STOP TRENCH IGBT
Description
General part information
RGTV80TK65 Series
RGTV80TK65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar Inverter, UPS, Welding, IH applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | RGTV80TK65GVC11 |
|---|---|
| Current - Collector (Ic) (Max) | 39 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Gate Charge | 81 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-3PFM, SC-93-3 |
| Package Name | TO-3PFM |
| Power - Max | 85 W |
| Switching Energy (Off) | 710 µJ |
| Switching Energy (On) | 1.02 mJ |
| Td (off) @ 25°C | 113 ns |
| Td (on) @ 25°C | 39 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
PCB Layout Thermal Design Guide
Importance of Probe Calibration When Measuring Power: Deskew
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Estimation of switching losses in IGBTs operating with resistive load
Impedance Characteristics of Bypass Capacitor
Precautions When Measuring the Rear of the Package with a Thermocouple
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Moisture Sensitivity Level
Notes for Calculating Power Consumption:Static Operation
Judgment Criteria of Thermal Evaluation
About Flammability of Materials
Basics of Thermal Resistance and Heat Dissipation
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
4 Steps for Successful Thermal Designing of Power Devices
How to Use LTspice® Models: Tips for Improving Convergence
Compliance of the ELV directive
Notes for Temperature Measurement Using Thermocouples
Two-Resistor Model for Thermal Simulation
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Calculation of Power Dissipation in Switching Circuit
Part Explanation
Anti-Whisker formation
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Method for Monitoring Switching Waveform
What is a Thermal Model? (IGBT)
Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules
About Export Administration Regulations (EAR)
Measurement Method and Usage of Thermal Resistance RthJC
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
What Is Thermal Design
How to Use LTspice® Models
Precautions for Thermal Resistance of Insulation Sheet
Types and Features of Transistors
Package Dimensions