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BSG0810NDIATMA1 - PG-TISON-8

BSG0810NDIATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 75 V ; DIRECTFET™ S PACKAGE; 45 MOHM;

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BSG0810NDIATMA1 - PG-TISON-8

BSG0810NDIATMA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 75 V ; DIRECTFET™ S PACKAGE; 45 MOHM;

Technical Specifications

Parameters and characteristics for this part

SpecificationBSG0810NDIATMA1
Configuration2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C19 A, 39 A
Drain to Source Voltage (Vdss)25 V
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs8.4 nC
Mounting TypeSurface Mount
Operating Temperature [Max]155 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max [Max]2.5 W
Rds On (Max) @ Id, Vgs [Max]3 mOhm
Supplier Device PackagePG-TISON-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.29
10$ 2.15
100$ 1.49
500$ 1.21
1000$ 1.12
2000$ 1.07
Digi-Reel® 1$ 3.29
10$ 2.15
100$ 1.49
500$ 1.21
1000$ 1.12
2000$ 1.07
Tape & Reel (TR) 5000$ 1.07
NewarkEach (Supplied on Cut Tape) 1$ 2.66
10$ 1.93
25$ 1.76
50$ 1.58
100$ 1.40
250$ 1.39
500$ 1.16
1000$ 1.12

Description

General part information

BSG0810 Series

OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.