Technical Specifications
Parameters and characteristics for this part
| Specification | MJD3055T4 |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Frequency - Transition | 2 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power - Max [Max] | 20 W |
| Supplier Device Package | DPAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 8 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MJD3055T4 Series
The device is manufactured in planar technology with "base island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources