RN1311,LXHF

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	RN1311,LXHF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Qualification	AEC-Q101
Resistor - Base (R1)	10 kOhms
Resistors Included	R1 Only
Supplier Device Package	SC-70
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type	Resistors Included	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Grade	Mounting Type	Package / Case	Frequency - Transition
Toshiba Semiconductor and Storage RN1311,LXHF	100 nA	50 V	300 mV	SC-70	NPN - Pre-Biased	R1 Only	10 kOhms	120	AEC-Q101	100 mA	100 mW	Automotive	Surface Mount	SC-70 SOT-323	250 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SC-70

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