Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | BDW93C | BDW93C Series |
---|---|---|
- | - | |
Current - Collector (Ic) (Max) [Max] | 12 A | 12 A |
Current - Collector Cutoff (Max) [Max] | 1 mA | 1 mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 hFE | 750 hFE |
Mounting Type | Through Hole | Through Hole |
Operating Temperature | 150 °C | 150 °C |
Package / Case | TO-220-3 | TO-220-3 |
Power - Max [Max] | 80 W | 80 W |
Supplier Device Package | TO-220 | TO-220 |
Vce Saturation (Max) @ Ib, Ic | 3 V | 3 V |
Vce Saturation (Max) @ Ib, Ic [custom] | 10 A | 10 A |
Vce Saturation (Max) @ Ib, Ic [custom] | 100 mA | 100 mA |
Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
BDW93C Series
Low voltage NPN Power Darlington transistor
Part | Vce Saturation (Max) @ Ib, Ic [custom] | Vce Saturation (Max) @ Ib, Ic [custom] | Vce Saturation (Max) @ Ib, Ic | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BDW93C | ||||||||||||
STMicroelectronics BDW93C | ||||||||||||
STMicroelectronics BDW93C | ||||||||||||
STMicroelectronics BDW93C | 10 A | 100 mA | 3 V | 80 W | 750 hFE | 1 mA | 150 °C | Through Hole | TO-220-3 | TO-220 | 12 A | 100 V |
Description
General part information
BDW93C Series
The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
Documents
Technical documentation and resources