Technical Specifications
Parameters and characteristics for this part
| Specification | BDW93C |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 80 W |
| Supplier Device Package | TO-220 |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Vce Saturation (Max) @ Ib, Ic [custom] | 10 A |
| Vce Saturation (Max) @ Ib, Ic [custom] | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BDW93C Series
The BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
Documents
Technical documentation and resources
