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SIGC100T65R3EX1SA2 - Wafer_MP

SIGC100T65R3EX1SA2

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Infineon Technologies

IGBT TRENCH FS 650V 200A DIE

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SIGC100T65R3EX1SA2 - Wafer_MP

SIGC100T65R3EX1SA2

Active
Infineon Technologies

IGBT TRENCH FS 650V 200A DIE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIGC100T65R3EX1SA2
Current - Collector (Ic) (Max) [Max]200 A
Current - Collector Pulsed (Icm)600 A
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseDie
Supplier Device PackageDie
Vce(on) (Max) @ Vge, Ic1.9 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

SIGC100 Series

The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry.

Documents

Technical documentation and resources