IPP80R1K2P7XKSA1

LTB

Infineon Technologies

MOSFET N-CH 800V 4.5A TO220-3

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LTB

Infineon Technologies

MOSFET N-CH 800V 4.5A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP80R1K2P7XKSA1

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	37 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case
Infineon Technologies IPP80R1K2P7XKSA1	4.5 A	3.5 V	10 V	300 pF	37 W	Through Hole	1.2 Ohm	20 V	PG-TO220-3	-55 °C	150 °C	800 V	N-Channel	11 nC	MOSFET (Metal Oxide)	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 1.96

General part information

N-Channel 800 V 4.5A (Tc) 37W (Tc) Through Hole PG-TO220-3

Technical documentation and resources

No documents available