Specification	SIR626DP-T1-RE3

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	78 nC
Input Capacitance (Ciss) (Max)	5130 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W
Rds On (Max)	1.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.4 V

SIR626 Series

Part	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Mounting Type	Package Name	Package / Case	Gate Charge (Max)	Vgs(th) (Max)	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)
Vishay Dale SIR626ADP-T1-RE3	40.4 A	165 A	N-Channel	-55 °C	150 °C	1.75 mOhm	20 V	6 V	10 V	6.25 W 104 W	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8	83 nC	3.5 V	MOSFET (Metal Oxide)	60 V	3770 pF
Vishay Dale SIR626DP-T1-RE3		100 A	N-Channel	-55 °C	150 °C	1.7 mOhm	20 V	6 V	10 V	104 W	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8	78 nC	3.4 V	MOSFET (Metal Oxide)	60 V	5130 pF

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