AIMW120R045M1XKSA1

Active

Infineon Technologies

THE 1200V COOLSIC™ MOSFETS FOR AUTOMOTIVE FAMILY HAS BEEN DEVELOPED FOR CURRENT AND FUTURE HV/LV DC-DC APPLICATIONS IN HYBRID AND ELECTRIC VEHICLES.

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Technical Data Sheet EN

AIMW120R045M1XKSA1

Active

Infineon Technologies

THE 1200V COOLSIC™ MOSFETS FOR AUTOMOTIVE FAMILY HAS BEEN DEVELOPED FOR CURRENT AND FUTURE HV/LV DC-DC APPLICATIONS IN HYBRID AND ELECTRIC VEHICLES.

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AIMW120R045M1XKSA1

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2130 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	228 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	PG-TO247-3
Vgs (Max) [Max]	20 V
Vgs (Max) [Min]	-7 V
Vgs(th) (Max) @ Id	5.7 V

AIMW120 Series

Part	Package / Case	FET Type	Vgs (Max) [Min]	Vgs (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Qualification	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Grade
Infineon Technologies AIMW120R045M1XKSA1	TO-247-3	N-Channel	-7 V	20 V	PG-TO247-3	57 nC	52 A	-40 C	175 °C	5.7 V	Through Hole	59 mOhm	AEC-Q101	228 W	2130 pF	1200 V	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 23.22
		10	$ 16.80
		100	$ 14.09
Newark	Each	1	$ 28.95
		5	$ 28.88
		10	$ 28.79
		25	$ 22.47
		50	$ 22.39
		100	$ 22.34
		480	$ 22.24

Description

General part information

AIMW120 Series

The AIMW120R045M1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance. The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost increase of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.