FZT458TA

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.3A I(C), 400V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 0.3A I(C), 400V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	FZT458TA

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	400 V

NPN, 400V, 0.3A, SOT223

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Frequency - Transition	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic
Diodes Inc FZT458TA	100 nA	-55 °C	150 °C	TO-261-4 TO-261AA	Surface Mount	50 MHz	NPN	SOT-223-3	400 V	300 mA	2 W	500 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 400V, 0.3A, SOT223

Technical documentation and resources