FZT757TA

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Diodes Inc

TRANS GP BJT PNP 300V 0.5A 4-PIN(3+TAB) SOT-223 T/R

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Active

Diodes Inc

TRANS GP BJT PNP 300V 0.5A 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	FZT757TA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	30 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]
Diodes Inc FZT757TC	SOT-223-3	-55 °C	150 °C	TO-261-4 TO-261AA	500 mA	30 MHz	300 V	Surface Mount	50	500 mV	2 W	PNP	100 nA
Diodes Inc FZT757TA	SOT-223-3	-55 °C	150 °C	TO-261-4 TO-261AA	500 mA	30 MHz	300 V	Surface Mount	50	500 mV	2 W	PNP	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

BVCEO > -300V

IC = -0.5A Continuous Current

ICM = -1A Peak Pulse Current

Technical documentation and resources