IXFR44N50Q3

Active

IXYS

MOSFET N-CH 500V 25A ISOPLUS247

Search across all available documentation for this part.

Active

IXYS

MOSFET N-CH 500V 25A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR44N50Q3

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	4800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	154 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
IXYS IXFR44N50Q3	154 mOhm	-55 °C	150 °C	6.5 V	25 A	MOSFET (Metal Oxide)	10 V	500 V	30 V	Through Hole	N-Channel	93 nC	TO-247-3	ISOPLUS247™	4800 pF	300 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 25A (Tc) 300W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available