1N4007T-G

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Comchip Technology

DIODE GEN PURP 1KV 1A DO41

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Comchip Technology

DIODE GEN PURP 1KV 1A DO41

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1N4007T-G	1N4007 Series

	-	-
Capacitance @ Vr, F	15 pF	15 pF
Current - Average Rectified (Io)	1 A	1 A
Current - Reverse Leakage @ Vr	5 µA	5 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	150 °C	150 °C
Operating Temperature - Junction [Min]	-55 °C	-55 °C
Package / Case	DO-204AL, DO-41, Axial	DO-204AL, DO-41, Axial
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	DO-41	DO-41
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DIODE GEN PURP 1KV 1A DO41

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Technology	Package / Case
Comchip Technology 1N4007T-G	5 µA	1000 V	15 pF	1 A	1.1 V	Through Hole	Standard Recovery >500ns	200 mA	150 °C	-55 °C	DO-41	Standard	Axial, DO-204AL, DO-41
Comchip Technology 1N4007B-G
Comchip Technology 1N4007B-G	5 µA	1000 V	15 pF	1 A	1.1 V	Through Hole	Standard Recovery >500ns	200 mA	150 °C	-55 °C	DO-41	Standard	Axial, DO-204AL, DO-41

General part information

Diode 1000 V 1A Through Hole DO-41

Technical documentation and resources

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