IXFN74N100X

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IXYS

MOSFET N-CH 1000V 74A SOT227B

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IXYS

MOSFET N-CH 1000V 74A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN74N100X

Current - Continuous Drain (Id) @ 25°C	74 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	425 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	17000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	1170 W
Rds On (Max) @ Id, Vgs [Max]	66 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Technology	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	FET Type
IXYS IXFN74N100X	5.5 V	30 V	SOT-227-4 miniBLOC	MOSFET (Metal Oxide)	1170 W	10 V	66 mOhm	SOT-227B	425 nC	17000 pF	74 A	-55 °C	150 °C	Chassis Mount	1000 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 70.35

General part information

N-Channel 1000 V 74A (Tc) 1170W (Tc) Chassis Mount SOT-227B

Technical documentation and resources