F4-50R07W2H3_B51

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Infineon Technologies

IGBT MODULE VCES 650V 50A

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Infineon Technologies

IGBT MODULE VCES 650V 50A

Technical Specifications

Parameters and characteristics for this part

Specification	F4-50R07W2H3_B51

Configuration	Full Bridge Inverter
Current - Collector (Ic) (Max) [Max]	65 A
Current - Collector Cutoff (Max) [Max]	1 mA
Input	Standard
Input Capacitance (Cies) @ Vce	2.95 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	520 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	NTC Thermistor	Package / Case	Configuration	Power - Max [Max]	Input	Voltage - Collector Emitter Breakdown (Max)	Input Capacitance (Cies) @ Vce
Infineon Technologies F4-50R07W2H3_B51	Chassis Mount	150 °C	-40 °C	1.7 V	Module	65 A	1 mA		Module	Full Bridge Inverter	520 W	Standard	650 V	2.95 nF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Full Bridge Inverter 650 V 65 A 520 W Chassis Mount Module

Technical documentation and resources