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ROHM SCT3160KWAHRTL

SCTH35N65G2V-7

Unknown
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 55 MOHM TYP., 45 A IN AN H2PAK-7 PACKAGE

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ROHM SCT3160KWAHRTL

SCTH35N65G2V-7

Unknown
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 55 MOHM TYP., 45 A IN AN H2PAK-7 PACKAGE

Find alt

Description

General part information

SCTH35N65G2V-7 Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Technical Specifications

Parameters and characteristics for this part

SpecificationSCTH35N65G2V-7
Current - Continuous Drain (Id) (Tc)45 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On)18 V
Drive Voltage (Min Rds On)20 V
FET TypeN-Channel
Gate Charge (Max)73 nC
Input Capacitance (Ciss) (Max)1370 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package Leads7 Leads
Package NameH2PAK-7, D2PAK
Power Dissipation (Max)208 W
Rds On (Max)67 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive22 V
Vgs(th) (Max)5 V

Pricing

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CAD

3D models and CAD resources for this part