STFI260N6F6

Obsolete

STMicroelectronics

MOSFET N-CH 60V 80A I2PAKFP

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Obsolete

STMicroelectronics

MOSFET N-CH 60V 80A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI260N6F6

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	183 nC
Input Capacitance (Ciss) (Max) @ Vds	11400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max) [Max]	41.7 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	I2PAKFP (TO-281)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
STMicroelectronics STFI260N6F6	4 V	Through Hole	N-Channel	10 V	MOSFET (Metal Oxide)	3 mOhm	11400 pF	183 nC	20 V	I2PAKFP (TO-281)	TO-262-3 Full Pack I2PAK	-55 °C	175 ░C	60 V	41.7 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 80A (Tc) 41.7W (Tc) Through Hole I2PAKFP (TO-281)

Technical documentation and resources