IDD09E60BUMA1

Obsolete

Infineon Technologies

DIODE GP 600V 19.3A TO252-3

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Obsolete

Infineon Technologies

DIODE GP 600V 19.3A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDD09E60BUMA1

Current - Average Rectified (Io)	19.3 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO252-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Package / Case	Speed	Current - Average Rectified (Io)	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type
Infineon Technologies IDD09E60BUMA1	DPAK (2 Leads + Tab) SC-63 TO-252-3	200 mA 500 ns	19.3 A	PG-TO252-3	75 ns	50 µA	Standard	2 V	600 V	175 ░C	-55 C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 19.3A Surface Mount PG-TO252-3

Technical documentation and resources