STI90N4F3

Obsolete

STMicroelectronics

MOSFET N-CH 40V 80A I2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 40V 80A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STI90N4F3

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics STI90N4F3	MOSFET (Metal Oxide)	Through Hole	4 V	10 V	110 W	I2PAK TO-262-3 Long Leads TO-262AA	54 nC	N-Channel	I2PAK	40 V	2200 pF	20 V	-55 °C	175 ░C	6.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 80A (Tc) 110W (Tc) Through Hole I2PAK

Technical documentation and resources