BSM400C12P3G202

NRND

Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 400 A, 1.2 KV, MODULE

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BSM400C12P3G202

NRND

Rohm Semiconductor

SILICON CARBIDE MOSFET, CHOPPER, N CHANNEL, 400 A, 1.2 KV, MODULE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

BSM400 Series

BSM400D12P3G002 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	BSM400C12P3G202

Current - Continuous Drain (Id) (Tc)	400 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	17000 pF
Mounting Type	Chassis Mount
Operating Temperature	175 °C
Package / Case	Module
Package Name	Module
Power Dissipation (Max)	1570 W
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	22 V
Vgs(th) (Max)	5.6 V

BSM400 Series

1200V, 358A, Half bridge, Full SiC-Power Module with Trench MOSFET

Part	Input Capacitance (Ciss) (Max)	Channel Count	Configuration - Features	Configuration	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Power - Max (Tc)	Package Name	Mounting Type	Drain to Source Voltage (Vdss)	Technology	FET Type	Vgs (Max) Positive	Vgs (Max) Negative	Power Dissipation (Max)	Operating Temperature
Rohm Semiconductor BSM400D12P3G002	17000 pF	2	Half Bridge	N-Channel	400 A	5.6 V	Module	-40 °C	150 °C	1570 W	Module	Chassis Mount	1200 V	Silicon Carbide (SiC)
Rohm Semiconductor BSM400C12P3G202	17000 pF				400 A	5.6 V	Module				Module	Chassis Mount	1200 V	SiCFET (Silicon Carbide)	N-Channel	22 V	-4 V	1570 W	175 °C

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

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