Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA60V60DF |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Gate Charge | 334 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 375 W |
| Reverse Recovery Time (trr) | 74 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 550 µJ, 750 µJ |
| Test Condition | 60 A, 400 V, 4.7 Ohm, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.91 | |
| 30 | $ 3.10 | |||
| 120 | $ 2.66 | |||
| 510 | $ 2.36 | |||
| 1020 | $ 2.02 | |||
| 2010 | $ 1.90 | |||
| 5010 | $ 1.83 | |||
Description
General part information
STGWA60V60DWFAG Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature. Its high forward surge capability ensures good robustness during transient phases.