CGRB207-G

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Comchip Technology

DIODE GEN PURP 1KV 2A DO214AA

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Comchip Technology

DIODE GEN PURP 1KV 2A DO214AA

Technical Specifications

Parameters and characteristics for this part

Specification	CGRB207-G

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SMB, DO-214AA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP 1KV 2A DO214AA

Part	Current - Average Rectified (Io)	Operating Temperature - Junction	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Supplier Device Package	Package / Case
Comchip Technology CGRB207-G	2 A	150 °C	Standard	Surface Mount	5 µA	1000 V	Standard Recovery >500ns	200 mA	1.1 V	SMB	DO-214AA	DO-214AA, SMB

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General part information

Diode 1000 V 2A Surface Mount DO-214AA (SMB)

Technical documentation and resources

No documents available